ty p-channel mosfet RU1C002ZP ? structure ? dimensions (unit : mm) ? features 1) low on-resistance. 2) low voltage drive(1.2v drive). ? application switching ? packaging specifications ? inner circuit package taping code tcl basic ordering unit (pieces) 3000 RU1C002ZP ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss ? 20 v gate-source voltage v gss ? 10 v continuous i d ? 200 ma pulsed i dp ? 800 ma continuous i s ? 100 ma pulsed i sp ? 800 ma power dissipation p d 150 mw channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 each terminal mounted on a reference land. ? thermal resistance symbol limits unit channel to ambient rth (ch-a) 833 ? c / w * each terminal mounted on a reference land. parameter type source current (body diode) drain current parameter *2 *1 * (1) gate (2) source (3) drain ? 1 body diode ? 2 esd protection diode *1 umt3f 2.0 0.32 0.65 0.65 1.3 2.1 1.25 0.425 0.425 (1) (2) (3) 0.9 0.53 0.53 0.13 abbreviated symbol : yk ? 2 ? 1 (3) (1) (2) product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 10v, v ds =0v drain-source breakdown voltage v (br)dss ? 20 - - v i d = ? 1ma, v gs =0v zero gate voltage drain current i dss -- ? 1 ? av ds = ? 20v, v gs =0v gate threshold voltage v gs (th) ? 0.3 - ? 1.0 v v ds = ? 10v, i d = ? 100 ? a - 0.8 1.2 i d = ? 200ma, v gs = ? 4.5v - 1.0 1.5 i d = ? 100ma, v gs = ? 2.5v - 1.3 2.2 i d = ? 100ma, v gs = ? 1.8v - 1.6 3.5 i d = ? 40ma, v gs = ? 1.5v - 2.4 9.6 i d = ? 10ma, v gs = ? 1.2v forward transfer admittance l y fs l 0.2 - - s v ds = ? 10v, i d = ? 200ma input capacitance c iss - 115 - pf v ds = ? 10v output capacitance c oss - 10 - pf v gs =0v reverse transfer capacitance c rss - 6 - pf f=1mhz turn-on delay time t d(on) -6-nsv dd ? 10v, i d = ? 100ma rise time t r -4-nsv gs = ? 4.5v turn-off delay time t d(off) - 17 - ns r l =100 ? fall time t f - 17 - ns r g =10 ? total gate charge q g - 1.4 - nc v dd ? 10v, i d = ? 200ma gate-source charge q gs - 0.3 - nc v gs = ? 4.5v gate-drain charge q gd - 0.3 - nc *pulsed ? body diode characteristics (source-drain) symbol min. typ. max. unit forward voltage v sd -- ? 1.2 v i s = ? 200ma, v gs =0v *pulsed conditions conditions parameter parameter static drain-source on-state resistance r ds (on) ? * * * * * * * * * * * RU1C002ZP product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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